p a r a m e t e r c o n d i t i o n s f o r w a r d r e c t i f i e d c u r r e n t f o r w a r d s u r g e c u r r e n t r e v e r s e c u r r e n t t h e r m a l r e s i s t a n c e d i o d e j u n c t i o n c a p a c i t a n c e s t o r a g e t e m p e r a t u r e s e e f i g . 2 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e l o a d ( j e d e c m e t h o d e ) f = 1 m h z a n d a p p l i e d 4 v d c r e v e r s e v o l t a g e s y m b o l m i n . t y p . m a x . u n i t i o i f s m i r r j a c j t s t g a a m a o c / w o c p f 0 . 5 1 5 1 . 0 + 1 7 5 - 6 5 4 2 o v = v t = 2 5 c r r r m j j u n c t i o n t o a m b i e n t 1 3 0 MBR0520G mbr0530g mbr0540g 2 0 3 0 4 0 1 4 2 1 2 8 2 0 3 0 4 0 - 5 5 t o + 1 0 0 s y m b o l s v r r m ( v ) v r m s v r ( v ) ( v ) * 1 * 2 * 3 * 1 r e p e t i t i v e p e a k r e v e r s e v o l t a g e * 2 r m s v o l t a g e * 3 c o n t i n u o u s r e v e r s e v o l t a g e * 4 m a x i m u m f o r w a r d v o l t a g e @ i = 0 . 5 a f v f ( v ) * 4 0 . 4 0 0 . 4 0 0 . 3 8 o ( c ) o p e r a t i n g t e m p e r a t u r e t , j 0 . 1 4 6 ( 3 . 7 ) 0 . 1 3 0 ( 3 . 3 ) 0 . 0 1 2 ( 0 . 3 ) ty p . 0 . 0 7 1 ( 1 . 8 ) 0 . 0 5 6 ( 1 . 4 ) 0 . 0 4 0 ( 1 . 0 ) 0 . 0 2 4 ( 0 . 6 ) 0 . 0 3 1 ( 0 . 8 ) ty p . 0 . 0 3 1 ( 0 . 8 ) ty p . MBR0520G thru mbr0504g low vf chip schottky barrier rectifier 0.5a surface mount schottky barrier rectifiers - 20v- 40v sod-123 package outline dimensions in inches and (millimeters) features batch process design, excellent power dissipation offers ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. ? ? low power loss, high efficiency. ? high current capability, low forward voltage drop. ? high surge capability. ? guardring for overvoltage protection. ? ultra high-speed switching. ? silicon epitaxial planar chip, metal silicon junction. ? lead-free parts meet environmental standards of mil-std-19500/228 ? suffix "-h" indicates halogen free parts, ex. MBR0520G-h. ? tiny plastic smd package. mechanical data ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, sod-123 ? terminals: solder plated, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.011 gram page 1/2 @ 2010 copyright by american first semiconductor maximum ratings (at t =25 a o c unless otherwise noted)
0.1 1.0 .01 10 50 fig.1-typical for w ard characteristics fig.2-typical for w ard current dera ting cur ve a verage for w ard current ,(a) fig.4-maximum non-repetitive for w ard surge current fig.5-typical junction cap acit ance reverse vol t age,(v) junction cap acit ance,(pf) inst ant aneous for w ard current ,(a) for w ard vol t age,(v) pulse width 300us 1% duty cycle 0.1 0.2 0.3 0.4 0.5 0.6 350 300 250 200 150 100 50 0 .01 .05 .1 .5 1 5 10 50 100 .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 single phase half w ave 60hz resistive or inductive load lead tempera ture ( c) 1 10 100 1000 fig.3 - typical reverse characteristics reverse leakage current , (ma) percent age ra ted peak reverse vol t age 0 20 40 60 80 100 120 140 .1 t =75 c j MBR0520G mbr0530g/mbr0540g t =25 c j t =25 c j number of cycles a t 60hz 0 0 20 40 60 80 100 120 140 160 180 200 0 6 3 9 15 12 1 10 5 50 100 t =25 c j 8.3ms single half sine w ave jedec method peak for w ard surge current ,(a) MBR0520G thru mbr0504g rating and characteristic curves page 2/2 www.first-semi.com
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